AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain

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Tut T., Gokkavas M., Ozbay E.

7th International Conference on Nitride Semiconductors (ICNS-7), Nevada, Amerika Birleşik Devletleri, 16 - 21 Eylül 2007, cilt.5, ss.2316-2319 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 5
  • Doi Numarası: 10.1002/pssc.200778735
  • Basıldığı Şehir: Nevada
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.2316-2319
  • Abdullah Gül Üniversitesi Adresli: Hayır

Özet

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar blind photodetectors have a sharp cutoff around 276 nm. The dark currents of the 40 mu m diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 x 10(14) cm Hz(1/2) W-1 for a 40 mu m diameter device.