AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain


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Tut T. , Gokkavas M., Ozbay E.

7th International Conference on Nitride Semiconductors (ICNS-7), Nevada, United States Of America, 16 - 21 September 2007, vol.5, pp.2316-2319 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 5
  • Doi Number: 10.1002/pssc.200778735
  • City: Nevada
  • Country: United States Of America
  • Page Numbers: pp.2316-2319

Abstract

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar blind photodetectors have a sharp cutoff around 276 nm. The dark currents of the 40 mu m diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 x 10(14) cm Hz(1/2) W-1 for a 40 mu m diameter device.