Tut, T. Et Al. 2007. AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain. 7th International Conference on Nitride Semiconductors (ICNS-7) , (Nevada, United States Of America), 2316-2319.

Tut, T., Gokkavas, M., & Ozbay, E., (2007). AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain . 7th International Conference on Nitride Semiconductors (ICNS-7) (pp.2316-2319). Nevada, United States Of America

Tut, TURGUT, Mutlu Gokkavas, And Ekmel Ozbay. "AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain," 7th International Conference on Nitride Semiconductors (ICNS-7), Nevada, United States Of America, 2007

Tut, TURGUT Et Al. "AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain." 7th International Conference on Nitride Semiconductors (ICNS-7) , Nevada, United States Of America, pp.2316-2319, 2007

Tut, T. Gokkavas, M. And Ozbay, E. (2007) . "AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain." 7th International Conference on Nitride Semiconductors (ICNS-7) , Nevada, United States Of America, pp.2316-2319.

@conferencepaper{conferencepaper, author={TURGUT TUT Et Al. }, title={AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain}, congress name={7th International Conference on Nitride Semiconductors (ICNS-7)}, city={Nevada}, country={United States Of America}, year={2007}, pages={2316-2319} }