Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes

Sahin M., KAPLAN R.

CURRENT APPLIED PHYSICS, vol.6, no.1, pp.114-118, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 6 Issue: 1
  • Publication Date: 2006
  • Doi Number: 10.1016/j.cap.2005.03.002
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.114-118
  • Keywords: a-Si : H Schottky diode, intensity- and temperature-dependence, recombination, electric field profile, HYDROGENATED AMORPHOUS-SILICON, STEADY-STATE PHOTOCONDUCTIVITY, SEMICONDUCTORS, RECOMBINATION
  • Abdullah Gül University Affiliated: No


The photocurrent of hydrogenated amorphous silicon (a-Si:H) Schottky diode has been studied as a function of light intensity from a HeNe laser, applied electric bias, and temperature, by using a constant photocurrent method. The I-V characteristics and thus fill factor (FF) values were also obtained over the temperature range 173-297 K. The FF increases very little as the temperature is decreased. The exponent in the power relationship I-ph similar to G(gamma) between photocurrent and light intensity was found to be temperature and electric field dependent, and peaked around 260 K measured. The activation energy obtained from thermally activated photocurrent was also found to be electric field dependent. These experimental results are discussed by means of the influence of the trapping of charge carriers on the electric field profile. (c) 2005 Elsevier B.V. All rights reserved.