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Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes
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M. Sahin And R. KAPLAN, "Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes," CURRENT APPLIED PHYSICS , vol.6, no.1, pp.114-118, 2006

Sahin, M. And KAPLAN, R. 2006. Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes. CURRENT APPLIED PHYSICS , vol.6, no.1 , 114-118.

Sahin, M., & KAPLAN, R., (2006). Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes. CURRENT APPLIED PHYSICS , vol.6, no.1, 114-118.

Sahin, MEHMET, And R KAPLAN. "Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes," CURRENT APPLIED PHYSICS , vol.6, no.1, 114-118, 2006

Sahin, MEHMET And KAPLAN, R. "Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes." CURRENT APPLIED PHYSICS , vol.6, no.1, pp.114-118, 2006

Sahin, M. And KAPLAN, R. (2006) . "Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes." CURRENT APPLIED PHYSICS , vol.6, no.1, pp.114-118.

@article{article, author={MEHMET ŞAHİN And author={R KAPLAN}, title={Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes}, journal={CURRENT APPLIED PHYSICS}, year=2006, pages={114-118} }