Solution-Deposited Organic-Inorganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors


Ha Y., Emery J. D. , Bedzyk M. J. , Usta H. , Facchetti A., Marks T. J.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, cilt.133, ss.10239-10250, 2011 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 133 Konu: 26
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1021/ja202755x
  • Dergi Adı: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • Sayfa Sayısı: ss.10239-10250

Özet

We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable pi-electron phosphonic acid building blocks and ultrathin ZrO2 layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5-12 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm(2)), excellent insulating properties (leakage current densities as low as 10(-7) A/cm(2)), and excellent thermal stability. Thin-film transistors (TFTs) fabricated with pentacene and PDIF-CN2 as representative organic semiconductors and zinc-tin-oxide (Zn-Sn-O) as a representative inorganic semiconductor function well at low voltages (<+/- 4.0 V). Furthermore, the TFT performance parameters of representative organic semiconductors deposited on Zr-SAND films, functionalized on the surface with various alkylphosphonic acid self-assembled monolayers, are investigated and shown to correlate closely with the alkylphosphonic acid chain dimensions.