Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

Tut T., Dan Y., Duane P., Yu Y., Wober M., Crozier K. B.

APPLIED PHYSICS LETTERS, vol.100, no.4, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 100 Issue: 4
  • Publication Date: 2012
  • Doi Number: 10.1063/1.3678019
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül University Affiliated: No


We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678019]