Self-consistent calculation of semiconductor heterojunctions using quantum genetic algorithm


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Sahin M. , TOMAK M.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.16, ss.3883-3893, 2002 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 16 Konu: 26
  • Basım Tarihi: 2002
  • Doi Numarası: 10.1142/s0217979202014759
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Sayfa Sayısı: ss.3883-3893

Özet

In this study, we have investigated the ground state energy level of electrons in modulation doped GaAs/AlxGa1-xAs heterojunctions. For this purpose, Schrodinger and Poisson equations are solved self consistently using quantum genetic algorithm (QGA). In this way, we have found the potential profile, the ground state subband energy and their corresponding envelope functions, Fermi level, and the amount of tunneling charge from barrier to channel region. Their dependence on various device parameters are also examined.