Self-consistent calculation of semiconductor heterojunctions using quantum genetic algorithm

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Sahin M., TOMAK M.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.16, sa.26, ss.3883-3893, 2002 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 26
  • Basım Tarihi: 2002
  • Doi Numarası: 10.1142/s0217979202014759
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3883-3893
  • Anahtar Kelimeler: heterostructures, 2DEG, genetic algorithm, self-consistent, DIMENSIONAL ELECTRON-GAS, MAGNETIC-FIELD, EVOLUTIONARY ALGORITHM, NUMERICAL-SOLUTION, SUBBAND STRUCTURE, GROUND-STATE, HETEROSTRUCTURES, MOBILITY, ENERGY, MBE
  • Abdullah Gül Üniversitesi Adresli: Hayır

Özet

In this study, we have investigated the ground state energy level of electrons in modulation doped GaAs/AlxGa1-xAs heterojunctions. For this purpose, Schrodinger and Poisson equations are solved self consistently using quantum genetic algorithm (QGA). In this way, we have found the potential profile, the ground state subband energy and their corresponding envelope functions, Fermi level, and the amount of tunneling charge from barrier to channel region. Their dependence on various device parameters are also examined.