Fabrication and characterisation of solar-blind Al0.6Ga0.41N MSM photodetectors
ELECTRONICS LETTERS, cilt.41, sa.5, ss.274-275, 2005 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 41 Sayı: 5
- Basım Tarihi: 2005
- Doi Numarası: 10.1049/el:20048028
- Dergi Adı: ELECTRONICS LETTERS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.274-275
- Abdullah Gül Üniversitesi Adresli: Evet
Özet
Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with similar to 255 nm cutoff wavelength.