Fabrication and characterisation of solar-blind Al0.6Ga0.41N MSM photodetectors

Biyikli N., Kimukin I., Tut T., Aytur O., Ozbay E.

ELECTRONICS LETTERS, vol.41, no.5, pp.274-275, 2005 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 41 Issue: 5
  • Publication Date: 2005
  • Doi Number: 10.1049/el:20048028
  • Journal Name: ELECTRONICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.274-275
  • Abdullah Gül University Affiliated: Yes

Abstract

Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with similar to 255 nm cutoff wavelength.