Solar-blind AlxGa1-xN-based avalanche photodiodes


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Tut T. , Butun S., Butun B., Gokkavas M., Yu H., Ozbay E.

APPLIED PHYSICS LETTERS, vol.87, no.22, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 87 Issue: 22
  • Publication Date: 2005
  • Doi Number: 10.1063/1.2135952
  • Title of Journal : APPLIED PHYSICS LETTERS

Abstract

We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2). (c) 2005 American Institute of Physics.