AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain

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Tut T., Gokkavas M., Inal A., Ozbay E.

APPLIED PHYSICS LETTERS, vol.90, no.16, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 90 Issue: 16
  • Publication Date: 2007
  • Doi Number: 10.1063/1.2724926
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül University Affiliated: Yes


The authors report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind photodetectors have a sharp cutoff around 276 nm. The dark currents of the 40 mu m diameter devices are measured to be lower than 8 fA for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D-*=1.4x10(14) cm Hz(1/2) W-1 for a 40 mu m diameter device. (c) 2007 American Institute of Physics.