Photosensing Properties of Pentacene OFETs Based on a Novel PMMA Copolymer Gate Dielectric

Loffredo F., Grimaldi I. A. , Miscioscia R., Nenna G., Villani F., Minarini C., et al.

JOURNAL OF DISPLAY TECHNOLOGY, cilt.11, ss.533-540, 2015 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 11 Konu: 6
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1109/jdt.2014.2363685
  • Sayfa Sayısı: ss.533-540


In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing methacrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. The properties of the pentacene layer deposited on ITO/PMMA copolymer stack were studied through morphological and structural analyses. Device photoresponses and photoexcitated transients were investigated and compared to reference devices based on standard PMMA gate dielectric.