Triisopropylsilylethynyl-substituted indenofluorenes: carbonyl versus dicyanovinylene functionalization in one-dimensional molecular crystals and solution-processed n-channel OFETs


ÖZDEMİR R. , PARK S., DENEME I., PARK Y., Zorlu Y., ALIDAGI H. A. , et al.

ORGANIC CHEMISTRY FRONTIERS, cilt.5, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 5 Konu: 20
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1039/c8qo00856f
  • Dergi Adı: ORGANIC CHEMISTRY FRONTIERS

Özet

The design and synthesis of novel electron-deficient and solution-processable polycyclic aromatic hydrocarbons offers great opportunities for the development of low-cost and large-area (opto)electronics. Although (trialkylsilyl)ethynyl (R3Si-C?C-) has emerged as a very popular unit to solubilize organic semiconductors, it has been applied only to a limited class of materials that are mostly substituted on short molecular axes. Herein, two novel solution-processable indenofluorene-based semiconductors, TIPS-IFDK and TIPS-IFDM, bearing (triisopropylsilyl)ethynyl end units at 2,8-positions (long molecular axis substitution) were synthesized, and their single-crystal structures, optoelectronic properties, solution-sheared thin-film morphologies/microstructures, and n-channel field-effect responses were studied. In accordance with the DFT calculations, the HOMO/LUMO energies of the new compounds are found to be -5.77/-3.65 eV and -5.84/-4.18 eV for TIPS-IFDK and TIPS-IFDM, respectively, reflecting the high electron deficiency of the new -backbones. Both semiconductors exhibit slightly S-shaped molecular frameworks with highly coplanar IFDK/IFDM -cores, and they form slipped -stacked one-dimensional (1-D) columnar motifs in the solid state. However, substantial differences in the degree of - interactions and stacking distances (4.04 angstrom vs. 3.47 angstrom) were observed between TIPS-IFDK and TIPS-IFDM as a result of carbonyl vs. dicyanovinylene functionalization, which results in a three orders of magnitude variation in the charge carrier mobility of the corresponding thin films. Top-contact/bottom-gate OFETs fabricated via solution-shearing TIPS-IFDM yielded one of the best performances in the (trialkylsilyl)ethynyl literature ((e) = 0.02 cm(2) V-1 s(-1), I-on/I-off = 10(7)-10(8), and V-T approximate to 2 V under ambient atmosphere) for a 1-D polycrystalline semiconductor microstructure. To the best of our knowledge, the molecules presented here are the first examples of n-type semiconductors substituted with (trialkylsilyl)ethynyl groups on their long molecular axes.