Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core

Usta H., Facchetti A., Marks T. J.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol.130, no.27, pp.8580-8582, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 130 Issue: 27
  • Publication Date: 2008
  • Doi Number: 10.1021/ja802266u
  • Journal Name: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.8580-8582
  • Abdullah Gül University Affiliated: No

Abstract

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10−0.16 cm2/V s in air, low turn-on voltages (0 to +5 V), and high on/off ratios of 107−108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis (dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm(2)/V S in air, low turn-on voltages (-0 to +5 V), and high on/off ratios of 10(7)-10(8). These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.