High performance A1(x)Ga(1)-N-x-based avalanche photodiodes

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Tut T., Butun B., Gokkavas M., Ozbay E.

PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, cilt.5, sa.2-3, ss.140-144, 2007 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 5 Sayı: 2-3
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.photonics.2007.05.001
  • Dergi Adı: PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.140-144
  • Anahtar Kelimeler: AlGaN, solar-blind, avalanche, schottky, SOLAR-BLIND
  • Abdullah Gül Üniversitesi Adresli: Evet

Özet

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. We improved the device performance by designing different epitaxial wafer structure with thinner active multiplication layer. We compare the resulting fabricated devices from these wafers in terms of dark current, photoresponse, avalanche gain performances. (C) 2007 Elsevier B.V. All rights reserved.