High performance A1(x)Ga(1)-N-x-based avalanche photodiodes


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Tut T., Butun B., Gokkavas M., Ozbay E.

PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, vol.5, no.2-3, pp.140-144, 2007 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 5 Issue: 2-3
  • Publication Date: 2007
  • Doi Number: 10.1016/j.photonics.2007.05.001
  • Journal Name: PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.140-144
  • Keywords: AlGaN, solar-blind, avalanche, schottky, SOLAR-BLIND
  • Abdullah Gül University Affiliated: Yes

Abstract

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 820 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. We improved the device performance by designing different epitaxial wafer structure with thinner active multiplication layer. We compare the resulting fabricated devices from these wafers in terms of dark current, photoresponse, avalanche gain performances. (C) 2007 Elsevier B.V. All rights reserved.