Chemically synthesized inverted pyramids on silicon surfaces for use as substrates in Raman spectroscopy


Genç S., Altınsoy B., Nasser H., Bek A.

18th Nanoscience and Nanotechnology Conference (NANOTR), İstanbul, Turkey, 26 - 28 August 2024, pp.370

  • Publication Type: Conference Paper / Summary Text
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.370
  • Abdullah Gül University Affiliated: Yes

Abstract

Efficient light trapping techniques are essential for enhancing silicon (Si) solar cell characteristics by reducing optical losses. Morphologies were created using the copper-assisted chemical etching (Cu-ACE) approach, employing different process parameters [1-2]. The etching solution consists of copper nitrate trihydrate (Cu[NO3]2), hydrofluoric acid, hydrogen peroxide, and deionized water. The systematic correlation analysis conducted on the molarity of the chemical ingredients demonstrates a considerable dependence between the molarity of Cu(NO3)2 and the ensuing surface morphology. This connection leads to the formation of either porous-like, micro elliptical shaped, or inverted pyramid (IP) structures on the surface of p-type Si [3-5]. The unique surface structure, characterized by tetragonal-star-shaped inverted pyramids (IPs), is achieved by incrementally raising the process temperature from 50°C to 55°C over a period of 15 minutes [6]. This procedure results in an exceptionally low weighted reflectance value of 2.65% on a p-type silicon wafer.