Akademik Veri Yönetim Sistemi
18th Nanoscience and Nanotechnology Conference (NANOTR), İstanbul, Türkiye, 26 - 28 Ağustos 2024, ss.370
Efficient light trapping techniques are essential for enhancing silicon (Si) solar cell characteristics by reducing optical losses. Morphologies were created using the copper-assisted chemical etching (Cu-ACE) approach, employing different process parameters [1-2]. The etching solution consists of copper nitrate trihydrate (Cu[NO3]2), hydrofluoric acid, hydrogen peroxide, and deionized water. The systematic correlation analysis conducted on the molarity of the chemical ingredients demonstrates a considerable dependence between the molarity of Cu(NO3)2 and the ensuing surface morphology. This connection leads to the formation of either porous-like, micro elliptical shaped, or inverted pyramid (IP) structures on the surface of p-type Si [3-5]. The unique surface structure, characterized by tetragonal-star-shaped inverted pyramids (IPs), is achieved by incrementally raising the process temperature from 50°C to 55°C over a period of 15 minutes [6]. This procedure results in an exceptionally low weighted reflectance value of 2.65% on a p-type silicon wafer.