In this study, we investigate the linear and third order nonlinear optical properties of InGaAsN/GaAs depending on nitrogen content and laser dressing parameter. As theoretical models, band anticrossing and model solid theory are used. In order to obtain the electronic properties of the quantum well, the finite difference method is used. The laser beam affects the electronic properties of the quantum well by changing the shape of the confinement potential. This modification of the potential is determined by laser dressing parameter. By using dilute amount of nitrogen, conduction band and the depth of quantum well can be controlled. The strain which is introduced due to the presence of nitrogen can be compensated by using indium atoms. The electronic and the linear and third order nonlinear optical properties of InGaAsN/GaAs quantum well structure are obtained.