Interface Engineering in Organic Thin Film Transistors

Liguori R., Fusco S., Rubino A., Usta H., Facchetti A.

40th International Semiconductor Conference (CAS), Sinaia, Romanya, 11 - 14 Ekim 2017, ss.143-146 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1109/smicnd.2017.8101182
  • Basıldığı Şehir: Sinaia
  • Basıldığı Ülke: Romanya
  • Sayfa Sayıları: ss.143-146
  • Abdullah Gül Üniversitesi Adresli: Evet

Özet

A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.