Pressure-induced structural phase transition of paracrystalline silicon

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Durandurdu M., DRABOLD D.

PHYSICAL REVIEW B, vol.66, no.20, 2002 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 66 Issue: 20
  • Publication Date: 2002
  • Doi Number: 10.1103/physrevb.66.205204
  • Journal Name: PHYSICAL REVIEW B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül University Affiliated: No

Abstract

We report on the pressure-induced phase transition in a model of paracrystalline silicon (amorphous silicon with a crystalline grain) using an ab initio constant pressure simulation technique. The paracrystalline model transforms into a high-density amorphous phase at 16 GPa with a discontinuous volume change of similar to24%. The transformation of the crystalline grain begins at the boundary and proceeds into the core. We also study the pressure-induced crystallization of the network using the Gibbs free-energy calculation and find a transition from the paracrystalline silicon to beta-Sn at 3-4 GPa. The electronic nature of the pressure-induced semiconductor-metal transition is discussed.