High-performance visible-blind GaN-based p-i-n photodetectors

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Butun B., Tut T., Ulker E., Yelboga T., Ozbay E.

APPLIED PHYSICS LETTERS, vol.92, no.3, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 92 Issue: 3
  • Publication Date: 2008
  • Doi Number: 10.1063/1.2837645
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül University Affiliated: No


We report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The dark current of the 200 mu m diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was similar to 0.23 A/W at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7x10(3) for wavelengths longer than 400 nm. (C) 2008 American Institute of Physics.