Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes

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Tut T., Gokkavas M., Butun B., Butun S., Ulker E., Ozbay E.

APPLIED PHYSICS LETTERS, vol.89, no.18, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 89 Issue: 18
  • Publication Date: 2006
  • Doi Number: 10.1063/1.2385216
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül University Affiliated: Yes


The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. (c) 2006 American Institute of Physics.