Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes

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Tut T., Gokkavas M., Butun B., Butun S., Ulker E., Ozbay E.

APPLIED PHYSICS LETTERS, cilt.89, sa.18, 2006 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 89 Sayı: 18
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1063/1.2385216
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül Üniversitesi Adresli: Evet

Özet

The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. (c) 2006 American Institute of Physics.