Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

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Tut T., Yelboga T., Ulker E., Ozbay E.

APPLIED PHYSICS LETTERS, cilt.92, sa.10, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 92 Sayı: 10
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1063/1.2895643
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Abdullah Gül Üniversitesi Adresli: Evet

Özet

We report on the high performance solar-blind AlGaN-based p-i-n photodetectors that are grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. The dark current of the 200 mu m diameter devices was measured to be on the order of 5 fA for bias voltages up to 10 V. The breakdown voltages were higher than 200 V. The responsivities of the photodetectors were 0.052 and 0.093 A/W at 280 nm under 0 and 40 V reverse biases, respectively. We achieved a detectivity of 7.5x10(14) cm Hz(1/2)/W for 200 mu m diameter AlGaN p-i-n detectors. (c) 2008 American Institute of Physics.