Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes

Capelli R., Toffanin S., Generali G., Usta H., Facchetti A., Muccini M.

NATURE MATERIALS, cilt.9, sa.6, ss.496-503, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 9 Sayı: 6
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1038/nmat2751
  • Dergi Adı: NATURE MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.496-503
  • Abdullah Gül Üniversitesi Adresli: Hayır

Özet

The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture, the switching mechanism of a thin-film transistor and an electroluminescent device. Thus, OLETs could open a new era in organic optoelectronics and serve as testbeds to address general fundamental optoelectronic and photonic issues. Here, we introduce the concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs, providing a new approach to markedly improve OLET performance and address these open questions. In this architecture, exciton-charge annihilation and electrode photon losses are prevented. Our devices are > 100 times more efficient than the equivalent OLED, > 2x more efficient than the optimized OLED with the same emitting layer and > 10 times more efficient than any other reported OLETs.

The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture, the switching mechanism of a thin-film transistor and an electroluminescent device. Thus, OLETs could open a new era in organic optoelectronics and serve as testbeds to address general fundamental optoelectronic and photonic issues. Here, we introduce the concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs, providing a new approach to markedly improve OLET performance and address these open questions. In this architecture, exciton–charge annihilation and electrode photon losses are prevented. Our devices are >100 times more efficient than the equivalent OLED, >2× more efficient than the optimized OLED with the same emitting layer and >10 times more efficient than any other reported OLETs.