High-speed characterization of solar-blind AlxGa1-N-x p-i-n photodiodes

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Biyikli N., Kimukin I., Tut T., Kartaloglu T., Aytur O., Ozbay E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.19, no.11, pp.1259-1262, 2004 (SCI-Expanded) identifier identifier


We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 mum diameter devices exhibited pulse responses with similar to70 ps pulse width and a corresponding 3 dB bandwidth of 1.65 GHz.