High-speed characterization of solar-blind AlxGa1-N-x p-i-n photodiodes


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Biyikli N., Kimukin I., Tut T. , Kartaloglu T., Aytur O., Ozbay E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.19, no.11, pp.1259-1262, 2004 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 19 Issue: 11
  • Publication Date: 2004
  • Doi Number: 10.1088/0268-1242/19/11/008
  • Title of Journal : SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Page Numbers: pp.1259-1262

Abstract

We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 mum diameter devices exhibited pulse responses with similar to70 ps pulse width and a corresponding 3 dB bandwidth of 1.65 GHz.