High-speed characterization of solar-blind AlxGa1-N-x p-i-n photodiodes

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Biyikli N., Kimukin I., Tut T., Kartaloglu T., Aytur O., Ozbay E.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.19, sa.11, ss.1259-1262, 2004 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 19 Sayı: 11
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1088/0268-1242/19/11/008
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1259-1262
  • Abdullah Gül Üniversitesi Adresli: Evet

Özet

We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth performance was enhanced by an order of magnitude with the removal of the absorbing p+ GaN cap layer. 30 mum diameter devices exhibited pulse responses with similar to70 ps pulse width and a corresponding 3 dB bandwidth of 1.65 GHz.