Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers


Yang X., Ma Y., Mutlugun E. , Zhao Y., Leck K. S. , Tan S. T. , ...Daha Fazla

ACS APPLIED MATERIALS & INTERFACES, cilt.6, sa.1, ss.495-499, 2014 (SCI İndekslerine Giren Dergi) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 6 Konu: 1
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1021/am404540z
  • Dergi Adı: ACS APPLIED MATERIALS & INTERFACES
  • Sayfa Sayıları: ss.495-499

Özet

An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.