Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
ACS APPLIED MATERIALS & INTERFACES, cilt.6, sa.1, ss.495-499, 2014 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 6 Sayı: 1
- Basım Tarihi: 2014
- Doi Numarası: 10.1021/am404540z
- Dergi Adı: ACS APPLIED MATERIALS & INTERFACES
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.495-499
- Anahtar Kelimeler: quantum dot, light-emitting diodes, nanoparticles, tungsten oxide, zinc oxide, NANOCRYSTALS, TRANSPARENT, PERFORMANCE, BRIGHT
- Abdullah Gül Üniversitesi Adresli: Evet
Özet
An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.