Solar-blind AlGaN-based Schottky photodiodes with high detectivity and low noise

Biyikli N., Aytur O., Kimukin I., Tut T., Ozbay E.

Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, Massachusetts, Amerika Birleşik Devletleri, 2 - 06 Aralık 2002, cilt.743, ss.511-516 identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 743
  • Basıldığı Şehir: Massachusetts
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.511-516
  • Abdullah Gül Üniversitesi Adresli: Evet

Özet

We report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al(0.38)Ga(0.62)N absorption layer, true solar-blind operation with a cutoff wavelength of similar to274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0-25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6x10(12) cmHz(1/2)/W, and the detector noise was 1/f limited with a noise power density less than 3x10(-29) A(2)/Hz at 10 KHz.