Solar-blind AlGaN-based Schottky photodiodes with high detectivity and low noise

Biyikli N., Aytur O., Kimukin I., Tut T., Ozbay E.

Symposium on GaN and Related Alloys held at the 2002 MRS Fall Meeting, Massachusetts, United States Of America, 2 - 06 December 2002, vol.743, pp.511-516 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 743
  • City: Massachusetts
  • Country: United States Of America
  • Page Numbers: pp.511-516
  • Abdullah Gül University Affiliated: Yes

Abstract

We report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al(0.38)Ga(0.62)N absorption layer, true solar-blind operation with a cutoff wavelength of similar to274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0-25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6x10(12) cmHz(1/2)/W, and the detector noise was 1/f limited with a noise power density less than 3x10(-29) A(2)/Hz at 10 KHz.