USTA, H. Et Al. 2019. High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs. CHEMISTRY OF MATERIALS , vol.31, no.14 , 5254-5263.

USTA, H., Kim, D., ÖZDEMİR, R., Zorlu, Y., Kim, S., Ruiz Delgado, M. C., ... Harbuzaru, A.(2019). High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs. CHEMISTRY OF MATERIALS , vol.31, no.14, 5254-5263.

USTA, HAKAN Et Al. "High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs," CHEMISTRY OF MATERIALS , vol.31, no.14, 5254-5263, 2019

USTA, HAKAN Et Al. "High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs." CHEMISTRY OF MATERIALS , vol.31, no.14, pp.5254-5263, 2019

USTA, H. Et Al. (2019) . "High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs." CHEMISTRY OF MATERIALS , vol.31, no.14, pp.5254-5263.

@article{article, author={HAKAN USTA Et Al. }, title={High Electron Mobility in [1]Benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors: Toward n-Type BTBTs}, journal={CHEMISTRY OF MATERIALS}, year=2019, pages={5254-5263} }